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igbt high speed igbt in trench and fieldstop technology recommended in combination with sic diode idh15s120 IGW25N120H3 1200v high speed switching series third generation data sheet industrial & multimarket
2 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25 high speed igbt in trench and fieldstop technology recommended in combination with sic diode idh15s120 features: trenchstop tm technology offering ? best in class switching performance: less than 500j total switching losses achievable ? very low v cesat ? low emi ? maximum junction temperature 175c ? qualified according to jedec for target applications ? pb-free lead plating; rohs compliant ? complete product spectrum and pspice models: http://www.infi neon.com/igbt/ applications: ? solar inverters ? uninterruptible power supplies ? welding converters ? converters with high switching frequency g c e key performance and package parameters type type type type v v v v ?? ?? ?? ?? i i i i ? ? ? ? v v v v ??, ??, ??, ??, t t t t y?=25c y?=25c y?=25c y?=25c t t t t y?? y?? y?? y?? marking marking marking marking package package package package IGW25N120H3 1200v 25a 2.05v 17 5c g25n120h3 pg-to247-3
3 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25 table of contents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
4 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25 maximum ratings parameter symbol value unit collector-emitter voltage v ?? 1200 v dc collector current, limited by t y?? t ? = 25c t ? = 100c i ? 50.0 25.0 a pulsed collector current, t ? limited by t y?? i ???e 100.0 a turn off safe operating area v ?? 1200v, t y? 175c - 100.0 a gate-emitter voltage v ?? 20 v short circuit withstand time v ?? = 15.0v, v ?? 600v allowed number of short circuits < 1000 time between short circuits: 1.0s t y? = 175c t ?? 10 s power dissipation t ? = 25c power dissipation t ? = 100c p 326.0 156.0 w operating junction temperature t y? -40...+175 c storage temperature t ? -55...+150 c soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction - case r ??- 0.46 k/w thermal resistance junction - ambient r ??- 40 k/w electrical characteristic, at electrical characteristic, at electrical characteristic, at electrical characteristic, at t t t t y? = 25c, unless otherwise specified y? = 25c, unless otherwise specified y? = 25c, unless otherwise specified y? = 25c, unless otherwise specified value min. typ. max. parameter symbol conditions unit static characteristic collector-emitter breakdown voltage v ?????? v ?? = 0v, i ? = 0.50ma 1200 - - v collector-emitter saturation voltage v ?? v ?? = 15.0v, i ? = 25.0a t y? = 25c t y? = 125c t y? = 175c - - - 2.05 2.50 2.70 2.40 - - v gate-emitter threshold voltage v ??? i ? = 0.85ma, v ?? = v ?? 5.0 5.8 6.5 v zero gate voltage collector current i ??? v ?? = 1200v, v ?? = 0v t y? = 25c t y? = 175c - - - - 250.0 2500.0 a gate-emitter leakage current i ??? v ?? = 0v, v ?? = 20v - - 600 na transconductance g ? v ?? = 20v, i ? = 25.0a - 13.0 - s
5 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25 electrical characteristic, at electrical characteristic, at electrical characteristic, at electrical characteristic, at t t t t y? = 25c, unless otherwise specified y? = 25c, unless otherwise specified y? = 25c, unless otherwise specified y? = 25c, unless otherwise specified value min. typ. max. parameter symbol conditions unit dynamic characteristic input capacitance c t - 1430 - output capacitance c t - 95 - reverse transfer capacitance c ?t - 75 - v ?? = 25v, v ?? = 0v, f = 1mhz pf gate charge q ? v ?? = 960v, i ? = 25.0a, v ?? = 15v - 115.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l ? - 13.0 - nh short circuit collector current max. 1000 short circuits time between short circuits: 1.0s i ???? v ?? = 15.0v, v ?? 600v, t ?? 10s t y? = 175c - 87 -a switching characteristic, inductive load, at switching characteristic, inductive load, at switching characteristic, inductive load, at switching characteristic, inductive load, at t t t t y? = 25c y? = 25c y? = 25c y? = 25c value min. typ. max. parameter symbol conditions unit igbt characteristic turn-on delay time t ? - 27 - ns rise time t ?-41-ns turn-off delay time t ??? - 277 - ns fall time t ?-17-ns turn-on energy e - 1.80 - mj turn-off energy e ?? - 0.85 - mj total switching energy e - 2.65 - mj t y? = 25c, v ?? = 600v, i ? = 25.0a, v ?? = 0.0/15.0v, r ? = 23.0a, l ? = 80nh, c ? = 67pf l ?, c ? from fig. e energy losses include ?tail? and diode (ikw25n120h3) reverse recovery. turn-on energy e - 0.08 - mj turn-off energy e ?? - 0.27 - mj total switching energy e - 0.35 - mj t y? = 25c, v ?? = 800v, i ? = 10.0a, v ?? = 0.0/15.0v, r ? = 3.0a, l ? = 80nh, c ? = 67pf l ?, c ? from fig. e energy losses include ?tail? and diode (idh15s120) reverse recovery.
6 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25 switching characteristic, inductive load, at switching characteristic, inductive load, at switching characteristic, inductive load, at switching characteristic, inductive load, at t t t t y? = 175c y? = 175c y? = 175c y? = 175c value min. typ. max. parameter symbol conditions unit igbt characteristic turn-on delay time t ? - 26 - ns rise time t ?-35-ns turn-off delay time t ??? - 347 - ns fall time t ?-50-ns turn-on energy e - 2.60 - mj turn-off energy e ?? - 1.70 - mj total switching energy e - 4.30 - mj t y? = 175c, v ?? = 600v, i ? = 25.0a, v ?? = 0.0/15.0v, r ? = 23.0a, l ? = 80nh, c ? = 67pf l ?, c ? from fig. e energy losses include ?tail? and diode (ikw25n120h3) reverse recovery. turn-on energy e - 0.10 - mj turn-off energy e ?? - 0.62 - mj total switching energy e - 0.72 - mj t y? = 175c, v ?? = 800v, i ? = 10.0a, v ?? = 0.0/15.0v, r ? = 3.0a, l ? = 80nh, c ? = 67pf l ?, c ? from fig. e energy losses include ?tail? and diode (idh15s120) reverse recovery.
7 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25 figure 1. figure 1. figure 1. figure 1. collector current as a function of switching collector current as a function of switching collector current as a function of switching collector current as a function of switching frequency frequency frequency frequency ( t ?175c, d =0.5, v ??=600v, v ??=15/0v, r ?=23a) f , switching frequency [khz] i ?, collector current [a] 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 110 t?=80 triangle t?=110 triangle t?=80 rectangle t?=110 rectangle figure 2. figure 2. figure 2. figure 2. forward bias safe operating area forward bias safe operating area forward bias safe operating area forward bias safe operating area ( d =0, t ?=25c, t ?175c; v ??=15v) v ??, collector-emitter voltage [v] i ?, collector current [a] 1 10 100 1000 0.1 1 10 100 t?=1s 10s 50s 100s 200s 500s dc figure 3. figure 3. figure 3. figure 3. power dissipation as a function of case power dissipation as a function of case power dissipation as a function of case power dissipation as a function of case temperature temperature temperature temperature ( t ?175c) t ?, case temperature [c] p , power dissipation [w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 figure 4. figure 4. figure 4. figure 4. collector current as a function of case collector current as a function of case collector current as a function of case collector current as a function of case temperature temperature temperature temperature ( v ??15v, t ?175c) t ?, case temperature [c] i ?, collector current [a] 25 50 75 100 125 150 175 0 10 20 30 40 50
8 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25 figure 5. figure 5. figure 5. figure 5. typical output characteristic typical output characteristic typical output characteristic typical output characteristic ( t ?=25c) v ??, collector-emitter voltage [v] i ?, collector current [a] 0 2 4 6 0 20 40 60 80 100 v??=20v 17v 15v 13v 11v 9v 7v 5v figure 6. figure 6. figure 6. figure 6. typical output characteristic typical output characteristic typical output characteristic typical output characteristic ( t ?=175c) v ??, collector-emitter voltage [v] i ?, collector current [a] 0 2 4 6 8 0 20 40 60 80 100 v??=20v 17v 15v 13v 11v 9v 7v 5v figure 7. figure 7. figure 7. figure 7. typical transfer characteristic typical transfer characteristic typical transfer characteristic typical transfer characteristic ( v ??=20v) v ??, gate-emitter voltage [v] i ?, collector current [a] 5 10 15 0 15 30 45 60 75 t?=25c t?=175c figure 8. figure 8. figure 8. figure 8. typical collector-emitter saturation voltage typical collector-emitter saturation voltage typical collector-emitter saturation voltage typical collector-emitter saturation voltage as a function of junction temperature as a function of junction temperature as a function of junction temperature as a function of junction temperature ( v ??=15v) t ?, junction temperature [c] v ???, collector-emitter saturation [a] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i?=12.5a i?=25a i?=50a
9 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25 figure 9. figure 9. figure 9. figure 9. typical switching times as a function of typical switching times as a function of typical switching times as a function of typical switching times as a function of collector current collector current collector current collector current (ind. load, t ?=175c, v ??=600v, v ??=15/0v, r ?=23a, test circuit in fig. e) i ?, collector current [a] t , switching times [ns] 5 15 25 35 45 10 100 1000 t??? t? t? t? figure 10. figure 10. figure 10. figure 10. typical switching times as a function of typical switching times as a function of typical switching times as a function of typical switching times as a function of gate resistor gate resistor gate resistor gate resistor (ind. load, t ?=175c, v ??=600v, v ??=15/0v, i ?=25a, test circuit in fig. e) r ?, gate resistor [a] t , switching times [ns] 5 15 25 35 45 55 65 10 100 1000 t??? t? t? t? figure 11. figure 11. figure 11. figure 11. typical switching times as a function of typical switching times as a function of typical switching times as a function of typical switching times as a function of junction temperature junction temperature junction temperature junction temperature (ind. load, v ??=600v, v ??=15/0v, i ?=25a, r ?=23a, test circuit in fig. e) t ?, junction temperature [c] t , switching times [ns] 0 25 50 75 100 125 150 175 10 100 1000 t??? t? t? t? figure 12. figure 12. figure 12. figure 12. gate-emitter threshold voltage as a gate-emitter threshold voltage as a gate-emitter threshold voltage as a gate-emitter threshold voltage as a function of junction temperature function of junction temperature function of junction temperature function of junction temperature ( i ?=0.85ma) t ?, junction temperature [c] v ???, gate-emitter threshold voltage [v] 0 25 50 75 100 125 150 175 2 3 4 5 6 7 typ. min. max.
10 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25 figure 13. figure 13. figure 13. figure 13. typical switching energy losses as a typical switching energy losses as a typical switching energy losses as a typical switching energy losses as a function of collector current function of collector current function of collector current function of collector current (ind. load, t ?=175c, v ??=600v, v ??=15/0v, r ?=23a, test circuit in fig. e) i ?, collector current [a] e , switching energy losses [mj] 5 15 25 35 45 0 2 4 6 8 10 12 e?? e e figure 14. figure 14. figure 14. figure 14. typical switching energy losses as a typical switching energy losses as a typical switching energy losses as a typical switching energy losses as a function of gate resistor function of gate resistor function of gate resistor function of gate resistor (ind. load, t ?=175c, v ??=600v, v ??=15/0v, i ?=25a, test circuit in fig. e) r ?, gate resistor [a] e , switching energy losses [mj] 5 15 25 35 45 55 65 0 1 2 3 4 5 6 7 e?? e e figure 15. figure 15. figure 15. figure 15. typical switching energy losses as a typical switching energy losses as a typical switching energy losses as a typical switching energy losses as a function of junction temperature function of junction temperature function of junction temperature function of junction temperature (ind load, v ??=600v, v ??=15/0v, i ?=25a, r ?=23a, test circuit in fig. e) t ?, junction temperature [c] e , switching energy losses [mj] 0 25 50 75 100 125 150 175 0 1 2 3 4 e?? e e figure 16. figure 16. figure 16. figure 16. typical switching energy losses as a typical switching energy losses as a typical switching energy losses as a typical switching energy losses as a function of collector emitter voltage function of collector emitter voltage function of collector emitter voltage function of collector emitter voltage (ind. load, t ?=175c, v ??=15/0v, i ?=25a, r ?=23a, test circuit in fig. e) v ??, collector-emitter voltage [v] e , switching energy losses [mj] 400 500 600 700 800 0 1 2 3 4 5 6 e?? e e
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11 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25 figure 17. figure 17. figure 17. figure 17. typical gate charge typical gate charge typical gate charge typical gate charge ( i ?=25a) q ??, gate charge [nc] v ??, gate-emitter voltage [v] 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 240v 960v figure 18. figure 18. figure 18. figure 18. typical capacitance as a function of typical capacitance as a function of typical capacitance as a function of typical capacitance as a function of collector-emitter voltage collector-emitter voltage collector-emitter voltage collector-emitter voltage ( v ??=0v, f=1mhz) v ??, collector-emitter voltage [v] c , capacitance [pf] 0 10 20 30 10 100 1000 c c c? figure 19. figure 19. figure 19. figure 19. typical short circuit collector current as a typical short circuit collector current as a typical short circuit collector current as a typical short circuit collector current as a function of gate-emitter voltage function of gate-emitter voltage function of gate-emitter voltage function of gate-emitter voltage ( v ??600v, start at t ?=25c) v ??, gate-emitter voltage [v] i ????, short circuit collector current [a] 10 12 14 16 18 20 40 60 80 100 120 140 160 180 figure 20. figure 20. figure 20. figure 20. short circuit withstand time as a function short circuit withstand time as a function short circuit withstand time as a function short circuit withstand time as a function of gate-emitter voltage of gate-emitter voltage of gate-emitter voltage of gate-emitter voltage ( v ??600v, start at t ?150c) v ??, gate-emitter voltage [v] t ??, short circuit withstand time [s] 10 12 14 16 18 20 0 10 20 30 40 50
12 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25 figure 21. figure 21. figure 21. figure 21. igbt transient thermal impedance igbt transient thermal impedance igbt transient thermal impedance igbt transient thermal impedance ( d = t ?/t) t ?, pulse width [s] z ??, transient thermal impedance [k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r[k/w]: [s]: 1 0.08133 2.6e-4 2 0.09366 1.7e-3 3 0.22305 0.01009673 4 0.05925 0.0336145 5 5.7e-3 0.2730749
13 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25 pg-to247-3
14 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25
15 IGW25N120H3 high speed switching series third generation rev. 1.1, 2011-01-25 revision history IGW25N120H3 revision: 2011-01-25, rev. 1.1 revision: 2011-01-25, rev. 1.1 revision: 2011-01-25, rev. 1.1 revision: 2011-01-25, rev. 1.1 previous revision revision date subjects (major changes since last revision) 1.1 - preliminary data sheet we listen to your comments any information within this document that you feel is wrong, unclear or missing at all ? your feedback will help us to conti nuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com published by infineon technologies ag 81726 munich, germany 81726 mnchen, germany ? 2011 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liab ilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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